Transphorm Launches Two Battery Charger Reference Designs Ideal For Two- And Three-wheel Electric Vehicles

GOLETA, Calif.--( BUSINESS WIRE )-- Transphorm, Inc. (Nasdaq: TGAN) is the global leader in rugged gallium nitride (GaN) power semiconductors. The company today announced two new reference designs for electric vehicle charging applications. The 300 W and 600 W constant current/constant voltage (CC/CV) battery chargers use the company's 70 milliohm and 150 milliohm SuperGaN® devices to deliver efficient AC to DC power conversion at a competitive cost and feature High power density. The two reference designs are designed to support the mass production of chargers for two- and three-wheel electric vehicles, with annual sales in India and China exceeding 14 million and 45 million units respectively. Both reference designs can also be used in a variety of applications, including fast charging, LED dimmable drivers, game consoles and high-performance laptops.

Tushar Dhayagude, vice president of global sales and FAE at Transphorm, said: “The adoption of GaN in the electric vehicle market is advancing rapidly. This is due in large part to the technology’s high power density and high performance compared to alternatives such as silicon carbide or silicon. Cost-effective, high-volume process. Specifically, our SuperGaN devices are making significant headway on two- and three-wheel vehicles because they offer system and component cost advantages compared to choosing silicon solutions. According to customers Consistent design requirements, we are pleased to release a reference design to help manufacturers of onboard or off-board chargers adopt GaN systems and accelerate time to market, thereby improving the performance and overall usability of next-generation vehicles."

CC/CV instructions

The constant current/constant voltage (CC/CV) lithium-ion battery charging method uses constant current charging in the early stage of charging. When the battery reaches the set charge level, it switches to constant voltage charging in the later stages of charging. This ensures that the battery will not be overcharged.

Open architecture CC/CV AC to DC battery charger

The 300 W and 600 W reference designs complement SuperGaN field effect transistors (FETs) and controllers in common power factor correction (PFC) and resonant LLC topologies, with LLC designed for a wide battery range (empty to fully charged) Designed. Transphorm's SuperGaN platform enables power system developers to realize the full performance potential of PFC+LLC, delivering the highest efficiency from these topologies at competitive cost.

The reference design uses a pure analog controller and a digital controller that requires firmware. This configuration has several benefits, such as easier design and simplified product development, stemming from the following factors:

• Reduce development resource requirements.
• Reduce development time.
• No need for cumbersome firmware programming/maintenance.

Note: The 300 W reference design includes an additional PWM input port for obtaining output current levels below the rated output value, providing further flexibility for all battery chemistries.

The main specifications are as follows:

Reference design	TDAIO-TPH-ON-CCCV-300W-RD	TDAIO-TPH-MPS-CCCV-600W-RD
VAC	90 to 264	90 to 264
Watts	300	600
SuperGaN FET	TP65H070G4PS x 3	TP65H070G4PS x 1 TP65H150G4PS x 2
drive	NCP1654 PFC (onsemi) NCP1399 LLC (onsemi)	HR1211 (MPS)
peak efficiency	95% @ 264 Vac	94.4% @ 264 Vac
conversion frequency	up to 150 kHz	up to 120 kHz

The reference design utilizes Transphorm’s SuperGaN field effect transistors, which are known for providing differentiating advantages such as:

• Industry-leading toughness with +/- 20v gate threshold voltage and 4V noise immunity.
• Reduces the amount of circuitry required around the device, making it easier to design.
• Easier to drive because field effect transistors can be paired with off-the-shelf drivers that are common and well known in silicon devices.

Access reference designs

Complete 300w and 600w CC/CV battery charger reference designs are currently available from Transphorm. Please visit the links below to download technical documents, design documents, firmware and bill of materials:

• TDAIO-TPH-ON-CCCV-300W-RD: https://www.transphormusa.com/en/reference-design/tdaio-tph-on-cccv-300w-rd/

• TDAIO-TPH-MPS-CCCV-600W-RD: https://www.transphormusa.com/en/reference-design/tdaio-tph-mps-cccv-600w-rd/

To ensure the accuracy of the battery charger design described above, power system developers should also refer to the following design guidelines:

• Constant current/constant voltage (CC/CV) is applied to power adapters with LLC output stages : https://www.transphormusa.com/en/document/design-guide-design-guide-11-constant-current-constant- voltage-application-for-llc/

For more information about the SuperGaN devices included in the design tool, please visit the following links:

• TP65H070G4PS
  650 V, 72 mOhm GaN FET in TO-220 package
  https://www.transphormusa.com/en/product/tp65h070g4ps/

• TP65H150G4PS
  650 V, 150 mOhm GaN FET in TO-220 package
  https://www.transphormusa.com/en/product/tp65h150g4ps/

About Transphorm

Transphorm, Inc. is a global leader in the gallium nitride (GaN) revolution. The company designs and manufactures high-performance, high-reliability GaN semiconductors for high-voltage power conversion applications. Transphorm has one of the largest power GaN IP portfolios, with over 1,000 owned or licensed patents. The company produced the industry's first high-voltage GaN semiconductor device that meets JEDEC and AEC-Q101 requirements. The company's vertically integrated device business model allows for innovation at every stage of development: design, manufacturing, equipment and application support. Transphorm's innovations enable power electronics to transcend the limitations of silicon, reaching over 99% efficiency, increasing power density by 50% and reducing system costs by 20%. Transphorm is headquartered in Goleta, California, with manufacturing operations in Goleta and Aizu, Japan. For more information, please visit: www.transphormusa.com . Please follow us on Twitter @transphormasa and WeChat @Transphorm_GaN.

The SuperGaN logo is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.

Disclaimer: The original version of this announcement is the officially authorized version. The translation is for convenience of understanding only. Please refer to the original text. The original version is the only legally binding version.

Contacts

Media Contact:
Heather Ailara
+1.973.567.6040
heather.ailara@transphormusa.com

Investor Contact:
David Hanover or Jack Perkins
KCSA Strategic Communications
transphorm@kcsa.com